*NAND2 final

* devices:
m0 vddp bin nand2 vddp p l=1.2u w=3.6u ad=9.062p as=15.54p pd=5.034u ps=12.23u
m1 nand2 ain vddp vddp p l=1.2u w=3.6u ad=15.54p as=9.062p pd=12.23u ps=5.034u
m2 6 bin nand2 gnd n l=1.2u w=9.6u ad=9.747p as=41.41p pd=2.027u ps=18.23u
m3 gnd ain 6 gnd n l=1.2u w=9.6u ad=27.03p as=9.729p pd=5.627u ps=2.027u
* lumped capacitances:
cp1 bin 0 12.6f
cp2 ain 0 13f
cp3 ain bin 0.3167f
cp4 nand2 0 22.77f
cp5 nand2 bin 1.08f
cp6 nand2 ain 2.52f
cp7 vddp 0 19.8f
cp8 vddp ain 0.91f
cp9 vddp nand2 0.55f
cp10 gnd 0 23.2f
vdd vddp 0 5   
vgnd gnd 0 0
vinA ain 0 dc pulse (0 5 0 0 0 10ns 20ns)
vinB bin 0 dc pulse (0 5 0 0 0 20ns 40ns)

.MODEL n NMOS
+ LEVEL=2 LD=0.1134U TOX=225.0E-10 XJ=0.2U
+ NSUB=1.968E+16 VTO=0.8186 KP=9.154E-05 GAMMA=0.5266
+ PHI=0.6 UO=596.5
+ DELTA=1.757 VMAX=1.942E+05
+ NFS=5.5E+12
+ RSH=116.5 TPG=1
+ CGDO=2.6106E-10 CGSO=2.6106E-10 CGBO=6.3402E-10 PB=0.8
+ CJ=3.1146E-04 MJ=.5 CJSW=4.3777E-10 MJSW=0.15423
.MODEL p PMOS
+ LEVEL=2 LD=0.1172U TOX=225.0E-10 XJ=0.2U
+ NSUB=1.514E+16 VTO=-0.9456 KP=3.1646E-05 GAMMA=0.4619
+ PHI=0.6 UO=206.2
+ DELTA=1.552 VMAX=4.441E+05
+ NFS=4.999E+12
+ RSH=129.5 TPG=-1
+ CGDO=2.6981E-10 CGSO=2.6981E-10 CGBO=8.6508E-10 PB=0.85
+ CJ=4.7864E-04 MJ=0.4973 CJSW=1.4771E-10 MJSW=0.190593

.tran .1n 50ns
.end